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KC856S - PNP General Purpose Double Transistor

Key Features

  • Reduces number of components and board space No mutual interference between the transistors. +0.15 2.3-0.15 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R JA Rating -80 -65 -5.

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Datasheet Details

Part number KC856S
Manufacturer Guangdong Kexin Industrial
File Size 62.99 KB
Description PNP General Purpose Double Transistor
Datasheet download datasheet KC856S Datasheet

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www.DataSheet4U.com SMD Type Transistors PNP General Purpose Double Transistor KC856S(BC856S) SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 Features Reduces number of components and board space No mutual interference between the transistors. +0.15 2.3-0.15 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.