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KMBT3906 - PNP Transistors

Key Features

  • +0.1 2.4-0.1 Epitaxial planar die construction +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector- Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current- Continuous Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, Tstg Rating -40 -40 -5 -0.2 0.3 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25.

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Datasheet Details

Part number KMBT3906
Manufacturer Guangdong Kexin Industrial
File Size 101.16 KB
Description PNP Transistors
Datasheet download datasheet KMBT3906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type PNP Transistors KMBT3906(MMBT3906) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Epitaxial planar die construction +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector- Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current- Continuous Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, Tstg Rating -40 -40 -5 -0.2 0.3 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector - base breakdown voltage Collector - emitter breakdown voltage www.DataSheet4U.