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Guangdong Kexin Industrial

KSP92 Datasheet Preview

KSP92 Datasheet

P-channel enhancement mode vertical D-MOS transistor

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SMD Type
TransistIoCrs
P-channel enhancement mode
vertical D-MOS transistor
KSP92
Features
Low threshold voltage VGS(th)
Direct interface to C-MOS, TTL,etc.
High-speed switching
www.DataNShoeseetc4oUn.dcaorymbreakdown.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
123
2.9
4.6
0.70+0.1
-0.1
1 gate
2,4 drain
3 source
Absolute Maximum Ratings Ta = 25
Parameter
drain-source voltage
gate-source voltage (open drain)
DC drain current
peak drain current
total power dissipation (up to Tamb = 25 *)
storage temperature range
junction temperature
from junction to ambient*
Symbol
-VDS
VGSO
-ID
-IDM
Ptot
Tstg
Tj
Rth j-a
Rating
240
20
180
720
1.5
-65 to 150
150
83.3
* Transistor mounted on an epoxy printed circuit board, 40X40 X 1.5 mm,
mounting pad for the drain tab minimum 6 cm2.
Unit
V
V
mA
mA
W
K/W
www.kexin.com.cn 1




Guangdong Kexin Industrial

KSP92 Datasheet Preview

KSP92 Datasheet

P-channel enhancement mode vertical D-MOS transistor

No Preview Available !

SMD Type
TransistIoCrs
KSP92
Electrical Characteristics Ta = 25 unless otherwise specified.
Parameter
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage
www.DatadSrahien-esto4uUr.cceoomn-resistance
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time (see Figs 1 and 2)
turn-off time (see Figs 1 and 2)
Symbol
-V(BR)DSS
-IDSS
IGSS
-VGS(th)
-VGS
RDS(on)
|Yfs|
Ciss
Coss
Crss
ton
toff
Testconditons
-ID = 10├ČA; VGS = 0
-VDS = 200 V; VGS = 0
VGS = 20 V; VDS = 0
-ID = 1 mA; VGS = VDS
-ID = 50 mA; -VDS = 5 V
-ID = 180 mA; -VGS = 10 V
-ID = 100 mA; -VGS = 5 V
-ID = 25 mA; -VGS = 2.8 V
-ID = 180 mA; -VDS = 25 V
-VDS = 25 V; VGS = 0; f = 1 MHz
-VDS = 25 V; VGS = 0; f = 1 MHz
-VDS = 25 V; VGS = 0; f = 1 MHz
-ID = 250 mA; -VDD = 50 V;-VGS = 0 to 10 V
-ID = 250 mA; -VDD = 50 V;-VGS = 0 to 10 V
Min Typ Max Unit
240 V
1 mA
100 nA
0.8 2 V
0.8 2.8 V
10 20
18
20
100 200
mS
65 90 pF
20 30 pF
6 15 pF
5 10 ns
20 30 ns
Fig.1 Switching times test circuit.
Fig.2 Input and output waveforms.
2 www.kexin.com.cn


Part Number KSP92
Description P-channel enhancement mode vertical D-MOS transistor
Maker Guangdong Kexin Industrial
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KSP92 Datasheet PDF





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