Datasheet Summary
HM2302
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL Features
- VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
S Schematic diagram
3D
G1
2S
Marking and pin Assignment
Application
- Battery protection
- Load switch
- Power management
SOT-23 top view
Package Marking And Ordering Information
Device...