• Part: 026M
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 418.83 KB
Download 026M Datasheet PDF
H&M Semiconductor
026M
DESCRIPTION The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES - VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package S Schematic diagram 3D G1 2S Marking and pin Assignment Application - Battery protection - Load switch - Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package HM2302 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power...