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2314

The 2314 is N-Channel Enhancement Mode Power MOSFET designed by H&M Semiconductor.

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H&M Semiconductor

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2314 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – 2314

Datasheet Details

Part number	2314
Manufacturer	H&M Semiconductor
File Size	711.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	2314-HMSemiconductor.pdf
Additional preview pages of the 2314 datasheet.

Product details

Description

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2314 Marking and pin assignment.

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Published: Apr 12, 2021 |