Datasheet Details
| Part number | 2314 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 711.50 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 2314 Datasheet
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|
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| Part number | 2314 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 711.50 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
2314 Datasheet
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|
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The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a battery protection or in other switching application.
General
HM2314B N-Channel Enhancement Mode Power MOSFET.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2314-RC | High Current Toroid Inductors | Bourns |
| Part Number | Description |
|---|