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H&M Semiconductor

2314 Datasheet Preview

2314 Datasheet

N-Channel Enhancement Mode Power MOSFET

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HM2314B
N-Channel Enhancement Mode Power MOSFET
Description
The HM2314B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
General Features
VDS = 20V,ID = 4.5A
RDS(ON) < 40m@ VGS=2.5V
RDS(ON) < 33m@ VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
D
G
S
Schematic diagram
2314
Marking and pin assignment
Application
Battery protection
Load switch
Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2314
HM2314B
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA =25
TA =70
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
4.5
3.6
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100
/W
Min Typ Max Unit
20 22
-
V
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 1
v1.0




H&M Semiconductor

2314 Datasheet Preview

2314 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
HM2314B
IDSS
VDS=20V,VGS=0V
-
-
1
μA
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=2.5V, ID=4.0 A
VGS=4.5V, ID=4.5A
VDS=10V,ID=4A
0.5 0.65 1.2
V
-
33
40
m
-
22
33
m
-
10
-
S
Clss
- 500
-
PF
VDS=8V,VGS=0V,
Coss
- 300
-
PF
F=1.0MHz
Crss
- 140
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
20
40
nS
VDD=10V,ID=1A
VGS=4.5V,RGEN=6
-
18
40
nS
-
60
108
nS
-
28
56
nS
-
10
15
nC
VDS=10V,ID=3A,VGS=4.5V -
2.3
-
nC
-
2.9
-
nC
VSD
VGS=0V,IS=1A
-
-
1.2
V
IS
-
-
1
A
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. Surface mounted on FR4 Board, t 10 sec.
3. Pulse test: pulse width 300μs, duty cycle 2%.
4. Guaranteed by design, not subject to production
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.0


Part Number 2314
Description N-Channel Enhancement Mode Power MOSFET
Maker H&M Semiconductor
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2314 Datasheet PDF






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