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HM2300DR - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2300DR by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2300DR N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2300DR N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2300DR
Manufacturer	H&M Semiconductor
File Size	687.94 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2300DR-HMSemiconductor.pdf
Additional preview pages of the HM2300DR datasheet.

HM2300DR Product details

Description

The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 8.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Nov 27, 2018 |