HM2301BKR Datasheet P-Channel 20V (D-S) MOSFET

Manufacturer: H&M Semiconductor

Datasheet Details

The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL.

RDS(ON)= 0.48Ω @VGS=-4.5V.
RDS(ON)= 0.67Ω @VGS=-2.5V.
RDS(ON)= 0.95Ω @VGS=-1.8V.
RDS(ON)= 2.20Ω @VGS=-1.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.
Load Switch.
DSC 2301 Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS.

Brand Logo	Part Number	Description	Manufacturer
	HM2301	Digital-output humidity and temperature sensor	Hanwei

Part Number	Description
HM2301B	P-Channel Trench Power MOSFET
HM2301BJR	P-Channel MOSFET
HM2301BSR	P-Channel 20V (D-S) MOSFET
HM2301	P-Channel Enhancement Mode Power MOSFET
HM2301A	P-Channel Enhancement Mode Power MOSFET
HM2301D	P-Channel 20V (D-S) MOSFET
HM2301DR	P-Channel 20V (D-S) MOSFET
HM2301F	P-Channel Enhancement Mode Power MOSFET
HM2301G	P-Channel Enhancement Mode Power MOSFET
HM2301KR	P-Channel Enhancement Mode Power MOSFET