HM2301BKR Datasheet PDF - H&M Semiconductor P-Channel 20V (D-S) MOSFET Specs

HM2301BKR - P-Channel 20V (D-S) MOSFET

Datasheet Summary

Description

The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipme

Features

RDS(ON)= 0.48Ω @VGS=-4.5V.
RDS(ON)= 0.67Ω @VGS=-2.5V.
RDS(ON)= 0.95Ω @VGS=-1.8V.
RDS(ON)= 2.20Ω @VGS=-1.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.
Load Switch.
DSC 2301 Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS.

Datasheet Details

Part number	HM2301BKR
Manufacturer	H&M Semiconductor
File Size	657.83 KB
Description	P-Channel 20V (D-S) MOSFET
Datasheet	HM2301BKR Datasheet
Additional preview pages of the HM2301BKR datasheet.

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Full PDF Text Transcription

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HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System FEATURES ● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.

Published: Nov 27, 2018 |