HM2305B mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -12V,ID = -4.1A RDS(ON) <78mΩ @ VGS=-2.5V RDS(ON) < 55mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
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General Features
* VDS = -12V,ID = -4.1A RDS(ON) <78mΩ @ VGS=-2.5V RDS(ON) < 55mΩ @ VGS=-4.5V
* High power and .
The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -12V,ID =.
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