HM2306 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2306 by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	HM2306
Manufacturer	H&M Semiconductor
File Size	279.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2306-HMSemiconductor.pdf
Additional preview pages of the HM2306 datasheet.

The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment .

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Published: Nov 27, 2018 |