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HM2324E - N-Channel Enhancement Mode Power MOSFET

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  Marking and pin Assignment +0 Marking and pin Assignment SOT-23 -3L top view Package Marking and Ordering Information Device Marking +0 Device  +0 Device Package 627/ Reel Size - Tape width -  1  Shenzhhettnp:H&//MwwSwem.himcosnem

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+0 100VDS/±20VGS/2.7A(ID) N-Channel Enhancement Mode MOSFET  Features  VDSS=1 00V/VGSS=±20V/ID=2.7A RDS(ON)=180mΩ(Max.)@VGS=10V RDS(ON)=240mΩ(Max.)@VGS=4.5V ESDprotect Reliable and Rugged  High Density Cell Design For Ultra Low On-Resistance  Applications z Synchronous Rectification z Power Management in Inverter System Switching Time Test Circuit and Waveforms  PinDescription   Marking and pin Assignment +0 Marking and pin Assignment SOT-23 -3L top view Package Marking and Ordering Information Device Marking +0 Device  +0 Device Package 627/ Reel Size - Tape width -  1  Shenzhhettnp:H&//MwwSwem.himcosnemdui.