Datasheet4U Logo Datasheet4U.com

HM2328 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM Package Dimensions Package Dimensions Marking D SOT-23(.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM2301 Digital-output humidity and temperature sensor Hanwei
HM2302 Digital temperature and humidity sensor ETC
HM2302 N-Channel MOSFET VBsemi
HM2309 P-Channel 60V MOSFET VBsemi
HM2310 N-Channel 60V MOSFET VBsemi

Other Datasheets by H&M Semiconductor

Part Number Description
HM2324E N-Channel Enhancement Mode Power MOSFET
HM2300 N-Channel Enhancement Mode Power MOSFET
HM2300B N-Channel Enhancement Mode Power MOSFET
HM2300C N-Channel Enhancement Mode Power MOSFET
HM2300D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
100V N Channel Enhancement Mode MOSFET 100 V N MOS HM2328 VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m Ω RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM Package Dimensions Package Dimensions Marking D SOT-23(PACKAGE) 2328 G S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.20 1.