HM3401D mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -4.6A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 5mΩ @ VGS=-4.5V RDS(ON) < 5mΩ @ VGS=-10V
* High Power and current handing capability
* Lead fr.
GENERAL FEATURES
* VDS = -30V,ID = -4.6A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 5mΩ @ VGS=-4.5V RDS(ON) < 5mΩ @ VG.
The HM3401' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID =.
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