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HM5853 - P-Channel MOSFET

General Description

HM5853 combines an PChannel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.

The tiny and thin outline saves PCB consumption.

Applications Li-Battery Charging High Side DC/DC Converter

Key Features

  • s.
  • Pin configuration P-Channel Top view VDS VGS RDSON Typ. ID 130mR@-4V5 -20V ±8V 170mR@-2V5 -2A 230mR@-1V8 Schottky VR IR VF Typ. IO 20V 15uA 410mV @0.5A 1A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+0 HM5853 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features  Pin configuration P-Channel Top view VDS VGS RDSON Typ. ID 130mR@-4V5 -20V ±8V 170mR@-2V5 -2A 230mR@-1V8 Schottky VR IR VF Typ. IO 20V 15uA 410mV @0.5A 1A  Description HM5853 combines an PChannel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. The tiny and thin outline saves PCB consumption.