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HM6409

Manufacturer: H&M Semiconductor
HM6409 datasheet preview

Datasheet Details

Part number HM6409
Datasheet HM6409-HMSemiconductor.pdf
File Size 807.60 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM6409 page 2 HM6409 page 3

HM6409 Overview

The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

HM6409 Key Features

  • VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
H&M Semiconductor logo - Manufacturer

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HM6409 Distributor

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