HM6409
HM6409 is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Application
- PWM applications
- Load switch
- Power management
S Schematic diagram
Marking and pin Assignment
SOT-23-L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-23-6L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC =25℃
Continuous Drain Current
TC =70℃ TA =25℃
TA =70℃
Drain...