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H&M Semiconductor

HM6409 Datasheet Preview

HM6409 Datasheet

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET
Description
The HM6409 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
VDS = -20V,ID = -5.0A
RDS(ON) <75m@ VGS=-2.5V
RDS(ON) < 52m@ VGS=-4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Power management
HM6409
D
G
S
Schematic diagram
Marking and pin Assignment
SOT-23-L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6409
HM6409
SOT-23-6L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25
Continuous Drain Current
TC =70
TA =25
ID
TA =70
Drain Current -Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±12
-5.0
-3.5
-3
-2.3
-15
1.7
-55 To 150
74
Unit
V
V
A
A
W
/W
Page 1
v1.1




H&M Semiconductor

HM6409 Datasheet Preview

HM6409 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

HM6409
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-20V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±12V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-5.0A
VGS=-2.5V, ID=-3A
Forward Transconductance
gFS VDS=-5V,ID=-2A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=-4V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-4V,ID=-3.3A ,
RL=-1.2,VGEN=-4.5V,Rg=1
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs VDS=-4V,ID=-5.0A,VGS=-4.5V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=-1.6A
IS
Min
-20
-
-
-0.45
-
-
6
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-0.7
39
58
-
740
290
190
12
35
30
10
7.8
1.2
1.6
-
-
Max
-
-1
±100
-1.0
52
75
-
-
-
-
-
-
-
-
-
-
-
-1.2
1.6
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Page 2
v1.1


Part Number HM6409
Description P-Channel Enhancement Mode Power MOSFET
Maker H&M Semiconductor
Total Page 7 Pages
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