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TO-92 Plastic-Encapsulate MOSFETS
+07000
V(BR)DSS
60 V
MOSFET (N-Channel)
RDS(on)MAX
5Ω@10V
6Ω@4.5V
ID
200mA
TO-92
1. SOURCE 2. GATE 3. DRAIN
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
MARKING
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol VDS ID PD RθJA TJ Tstg
Value 60 0.2 0.