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H&M Semiconductor

HM70P04 Datasheet Preview

HM70P04 Datasheet

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET
Description
The HM70P04 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for high current load applications.
General Features
VDS =-40V,ID =-70A
RDS(ON) <10m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switch
Load switch in high current applications
DC/DC converters
HM70P04
Schematic diagram
HM70P04
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM70P04
HM70P04
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-40
±20
-70
-35
-210
65
0.52
1020
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
Page 1
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
v1.0




H&M Semiconductor

HM70P04 Datasheet Preview

HM70P04 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

HM70P04
Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2)
RθJC
1.92
/W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.2 -1.9 -2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-20A
-
7.5
10
m
Forward Transconductance
gFS
VDS=-10V,ID=-20A
-
50
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
- 6460
-
PF
VDS=-20V,VGS=0V,
Coss
-
684
-
PF
F=1.0MHz
Crss
-
600
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
-
15
-
nS
VDD=-20V, RL=2
-
12
-
nS
VGS=-10V,RG=1
-
70
-
nS
Turn-Off Fall Time
tf
-
18
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
106
nC
VDS=-20,ID=-20A,
Qgs
-
22
nC
VGS=-10V
Qgd
-
27
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-10A
-
-1.2
V
Diode Forward Current (Note 2)
IS
-
-
-70
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF =- 10A
-
53
nS
Qrr
di/dt = -100A/μs(Note3)
-
50
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25,VDD=-20V,VG=-10V,L=1mH,Rg=25,IAS=45A
Page 2
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
v1.0


Part Number HM70P04
Description P-Channel Enhancement Mode Power MOSFET
Maker H&M Semiconductor
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HM70P04 Datasheet PDF






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