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HMS21N60 - N-Channel Super Junction Power MOSFET

General Description

gate charge.

conversion, and industrial power applications.

Key Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant T VDS@ jmax 650 V RDS(ON) MAX 180 mΩ ID 21 A.

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Full PDF Text Transcription for HMS21N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HMS21N60. For precise diagrams, and layout, please refer to the original PDF.

HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and design to provide excelle...

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s use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

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