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H&M Semiconductor

HMS21N60 Datasheet Preview

HMS21N60 Datasheet

N-Channel Super Junction Power MOSFET

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HMS21N60,HMS21N60F
N-Channel Super Junction Power MOSFET II
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
T VDS@ jmax
650
V
RDS(ON) MAX
180
m
ID
21
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
HM621N60
TO-220
HM621N60
HM621N60F
TO-220F
HM621N60F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25)
PD
Derate above 25°C
Single pulse avalanche energy (Note 2)
EAS
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
EAR
TO-220 TO-220F
HMS21N60 HMS21N60F
600
±30
21
21*
13.2
13.2*
63
63*
200
34
1.6
0.27
690
7
1
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
==p
=
=eC =p
LL
= i=
=====




H&M Semiconductor

HMS21N60 Datasheet Preview

HMS21N60 Datasheet

N-Channel Super Junction Power MOSFET

No Preview Available !

HMS21N60,HMS21N60F
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
dv/dt
dv/dt
TJ,TSTG
Symbol
RthJC
RthJA
HMS21N60 HMS21N60F
50
15
-55...+150
Unit
V/ns
V/ns
°C
HMS21N60
0.62
62.5
HMS21N60F
3.67
80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=10.5A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS
VDS = 20V, ID = 10.5A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=480V,ID=21A,
VGS=10V
Qgd
RG
f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=11A,
RG=4,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
Pulsed Source-drain current(Body Diode)
ISDM
TC=25°C
Forward on voltage
VSD
Tj=25°C,ISD=21A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Tj=25°C,IF=21A,di/dt=100A/μs
Peak Reverse Recovery Current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Min
600
2.5
Typ Max
0.05
3
150
1
100
±100
3.5
180
17.5
1950
150
5
45
70
9
18
1
11
6
61
100
4.5
12
21
63
0.9
1.3
310
5
28
Unit
V
μA
μA
nA
V
m
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
==p
=
=eC =p
LL
= i=
=====


Part Number HMS21N60
Description N-Channel Super Junction Power MOSFET
Maker H&M Semiconductor
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HMS21N60 Datasheet PDF






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