HM20N120AB
HM20N120AB is IGBT manufactured by H&M Semiconductor.
Features
- 1200V,20A
- VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A
- High speed switching
- Higher system efficiency
- Soft current turn-off waveforms
+01$%
General Description
KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
Continuous Collector Current ( TC=25 ℃ )
Continuous Collector Current ( TC=100℃ )
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current ( TC=100 ℃ )
Diode Maximum Forward Current (Note 1)
Maximum Power Dissipation ( TC=25 ℃ )
Maximum Power Dissipation ( TC=100℃ )
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Thermal Characteristics
Value 1200 + 30
40 20 60 20 60 160 60 -55 to +150 -55 to +150
Symbol Rth j-c Rth j-c Rth j-a
Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient
Max. 0.78 0.95...
