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HM3305 - N-Channel Enhancement Mode Power MOSFET

Description

The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =150A RDS(ON).

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Datasheet Details

Part number HM3305
Manufacturer H&M semi
File Size 652.53 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3305 Datasheet
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HM3305 N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) <4.
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