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HM3305 Datasheet Preview

HM3305 Datasheet

N-Channel Enhancement Mode Power MOSFET

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HM3305
N-Channel Enhancement Mode Power MOSFET
Description
The HM3305 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =150A
RDS(ON) <4.5m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
HM3305
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM3305
HM3305
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100)
ID
ID (100)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Limit
60
±20
150
105
600
220
Unit
V
V
A
A
A
W
Page 1
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
v1.0




H&M semi

HM3305 Datasheet Preview

HM3305 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

HM3305
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
1.47
1400
-55 To 175
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.68
/W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60 68
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=75A
-
3.4
4.5
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=50V,ID=75A
180
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 6500
-
PF
VDS=25V,VGS=0V,
Coss
-
650
-
PF
F=1.0MHz
Crss
-
590
-
PF
Turn-on Delay Time
td(on)
-
26
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDD=30V,ID=2A,RL=15
-
24
-
nS
td(off)
VGS=10V,RG=2.5
-
91
-
nS
Turn-Off Fall Time
tf
-
39
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
163
nC
VDS=30V,ID=30A,
Qgs
-
31
nC
VGS=10V
Qgd
-
64
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=40A
-
1.2
V
IS
-
-
150
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
-
42
60
nS
Qrr
di/dt = 100A/μs(Note3)
-
66
80
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
Page 2
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
v1.0


Part Number HM3305
Description N-Channel Enhancement Mode Power MOSFET
Maker H&M semi
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