HM3305 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =150A
RDS(ON) <4.5mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and cu.
General Features
* VDS =60V,ID =150A
RDS(ON) <4.5mΩ @ VGS=10V
Schematic diagram
* High density cell design f.
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