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2314

Manufacturer: H&M Semiconductor

2314 datasheet by H&M Semiconductor.

2314 datasheet preview

2314 Datasheet Details

Part number 2314
Datasheet 2314-HMSemiconductor.pdf
File Size 711.50 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
2314 page 2 2314 page 3

2314 Overview

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

2314 Key Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • Battery protection -Load switch -Power management

2314-RC from other manufacturers

View 2314-RC datasheet index

Brand Logo Part Number Description Other Manufacturers
Bourns Logo 2314-RC High Current Toroid Inductors Bourns
H&M Semiconductor logo - Manufacturer

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