HM30P10K
HM30P10K is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
+0 3.
P-Channel Enhancement Mode Power MOSFET
Description
The +03. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
- VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=--4.5V (Typ:48mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Schematic diagram +03.
Application
- Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and...
