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HM3307B Datasheet N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM3307B 70VDS/±25VGS/114A(ID) N-Channel Enha ncement Mode MOSFET.

General Description

Applications  Synchronous Rectification  Power Management in Inverter System Switching Time Test Circuit and Waveforms HM3307B Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM3307B Device HM3307B Device Package TO-220-3L Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http://.hmsemi.

 Quantity - HM3307B 70VDS/±25VGS/114A(ID) N-Channel Enha ncement Mode MOSFET Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.

Typ Max.

Key Features

  • VDSS=70V/VGSS=±25V/ID=114A RDS(ON)=8mΩ(max. )@VGS=10V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology  Pin.

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