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HAMAMATSU

S13645-01CR Datasheet Preview

S13645-01CR Datasheet

Photosensors

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Photosensor with front-end IC
S13645-01CR
Compact 16-element APD array suitable for
various light level detection
The S13645-01CR is a compact optical device that integrates 16-element Si APD array and preamp. It has a built-in DC feed-
back circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics.
Features
High-speed response: 180 MHz
Two-level gain switch function
(low gain: single output, high gain: defferential output)
Reduced background light effects
Small waveform distortion when excessive light is incident
Applications
Distance measurement
Option
Driver circuit
C13666-03
Structure
Parameter
Detector
Photosensitive area (per 1 element)
Element pitch
Number of elements
Package
Symbol
-
A
-
-
-
Specification
Si APD array
1.0 × 0.4
0.5
16
Plastic
Unit
-
mm
mm
-
-
Absolute maximum ratings
Parameter
Symbol
Condition
Value
Unit
Supply voltage (for preamp)
Vcc max
4.5 V
Reverse voltage (for APD)
V_APD
0 to VBR
V
Reverse current (DC)
IR max
0.2 mA
DCFB terminal voltage
-
Vcc + 0.7
V
Gain terminal voltage
-
Vcc + 0.7
V
Channel selection terminal voltage
Operating temperature
Storage temperature
Soldering conditions*2
-
Topr
Tstg
-
Vcc + 0.7
No dew condensation*1
-20 to +85
No dew condensation*1
-40 to +100
Peak temperature 240 °C max., 2 times (see P.5)
V
°C
°C
-
*1: W hen there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1




HAMAMATSU

S13645-01CR Datasheet Preview

S13645-01CR Datasheet

Photosensors

No Preview Available !

Photosensor with front-end IC
S13645-01CR
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Spectral response range
λ
Peak sensitivity wavelength
λp M=100
-
Photosensitivity
λ=840 nm, M=50,
S
low gain
λ=840 nm, M=50,
high gain
35
700
Breakdown voltage
VBR ID=100 µA
120
Temperature coefficient of
breakdown voltage
ΔTVBR
-
Dark current
ID M=50
-
Temperature coefficient of
dark current
ΔTID M=50
-
Terminal capacitance
Ct M=50, f=1 MHz
-
Excess noise figure
x M=50, λ=840 nm
-
Gain
M λ=840 nm
40
Current consumption
Ic
Low gain
High gain
45
45
Low cutoff frequency
fcl
Low gain
High gain
-
-
High cutoff frequency
fch
Low gain
High gain
120
100
Input conversion noise power
en
f=10 MHz, M=50
f=100 MHz, M=50
Spectral response
Output voltage level
-
Low gain
High gain
-
-
0.65
0.5
Output offset voltage
Voffset High gain Dark current vs. revers-e voltage
Maximum output voltage
amplitude
Vp-p max
Low gain
High gain
0.3
0.4
Supply voltage
Vcc1, Vcc2
3.135
Crosstalk
-
-
Typ.
400 to 1150
840
50
1000
160
1.1
0.4
1.1
1.6
0.3
50
65
65
0.01
0.5
180
160
160
240
1.15
1
-
-0.6
±0.8
3.3
-25
Max.
-
65
1300
200
-
4
-
-
-
60
85
85
0.1
5
240
220
220
330
1.65
1.5
±100
-
-
3.465
-20
Unit
nm
nm
kV/W
V
V/°C
nA
times/°C
pF
-
-
mA
MHz
MHz
fW/Hz1/2
V
mV
V
V
dB
Spectral response
(Typ. Ta=25 °C, M=50 at 840 nm)
100
80
60
40
20
0
400
600 800 1000
Wavelength (nm)
1200
KPICB0199EC
Dark current vs. reverse voltage
100 μA
(Typ. Ta=25 °C)
10 μA
1 μA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0 20 40 60 80 100 120 140 160 180 200
Reverse voltage (V)
KPICB0200EA
2


Part Number S13645-01CR
Description Photosensors
Maker HAMAMATSU
Total Page 7 Pages
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