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BT151B-650R Datasheet Preview

BT151B-650R Datasheet

Plastic envelope SCRs

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12A SCR SMD: 12A貼片單向可控硅【产品参数规格书】
BT151B Series
Plastic envelope SCRs
DESCRIPTION:
 HBT151B series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current,
 provide high dv/dt rate with strong resistance to electromagnetic interference.
 They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc.
QUICK REFERENCE【參考特性】
Part Number
Industry Part
IT(RMS)
VDRM / VRRM
IGT
Package
HBT151B-500R
HBT151B-600R
HBT151B-650R
HBT151B-800R
HBT151B-900R
HBT151B-1000R
BT151B-500R
BT151B-600R
BT151B-650R
BT151B-800R
BT151B-900R
BT151B-1000R
500 V
600 V
650 V
800 V
900 V
1000 V
SMD
D2PAK
TO-263
SOT404
說明
Explain
①此規格為貼片封裝、非絕緣型、單向可控硅,電流值可按客戶要求定制
②常規品种以500V电压規格出貨, 高壓規格600V品種以上批量交期6~8
③門極觸發電流IGT值可根據客戶要求細分至多個規格, 單位mA (毫安)
Packing
50Pcs/Tube
4Kpcs/Box
2.5Kpcs/Rell
每管50
每盒4000
每卷2500
每盒5000
2.1g / Pcs
每枚重量2.1
K2.5千克
Marking
H
XXXXXXXXXX
KKG aabb
元件標識可按
客戶指定要求
PINNING: TO-263 (SOT404, D2PAK) 【表面貼TO-263片式封裝】
Pin
Symbol
Description
Description
Practicality in Pin Arrange
1 K Cathode 陰 極
2 A Anode 陽 極
3G
Gate
-控制極
4
mb mounting base
散熱片
4
2
1
3
"B"表示貼片元件TO-263封裝-載帶卷盤包裝】
Pin Polarity Circuit diagram
1=K
2=A
3=G
4=2=A
A
G
K
ORDERING INFORMATION
H BT
↓↓
151
IT(RMS)
12A
B
 Package
 B: D2PAK
 B: TO-263
 B: SOT404
- 650
VDRM / VRRM
500=500V
600=600V
650=650V
800=800V
900=900V
1000=1000V
R
IGT
15mA
http://www.kkg.com.cn
HAOHAI ELECTRONICS CO., LTD.
注册商标111 111仿冒必究
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
BT151B Series: TO-263 or D2PAK




HAOHAI

BT151B-650R Datasheet Preview

BT151B-650R Datasheet

Plastic envelope SCRs

No Preview Available !

12A SCR SMD: 12A貼片單向可控硅【产品参数规格书】
ABSOLUTE RATINGs (Limiting Values)【额定值参数】
Symbol
Parameter
IT(RMS)
ITSM
IGM
VDRM
VRRM
I2t
RMS on-state current (TC=100)
Non repetitive surge peak on-state current (tp=10ms)
Peak gate current
Repetitive peak off-state voltage (Tj=25)
Repetitive peak reverse voltage (Tj=25)
I2t value for fusing (tp=10ms)
dIT/dt
PGM
PG(AV)
Tj
Tstg
Repetitive rate of rise of on-state current (IG=2×IGT)
Peak gate power
Average gate power dissipation
Operating junction temperature range
Storage junction temperature range
BT151B Series
Plastic envelope SCRs
Value
12
120
2
500~1000
72
50
5
0.5
-40~125
-40~150
Unit
A
V
A2S
A/μs
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
IGT
IL
IH
VGT
VGD
dV/dt
Test Condition
VD=12V, RL=33
IG=1.2 IGT
IT=500mA
VD=12V, RL=33
VD=VDRM, Tj=125, RL=3.3K
VD=2/3VDRM, Gate Open, Tj=125
MIN.
--
--
--
--
0.2
200
Value
TYP.
4
12
12
0.75
--
400
MAX.
15
40
30
1.5
--
--
Unit
mA
V
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM
IDRM
IRRM
ITM=23A, tp=380μs
VD=VDRM, VR=VRRM
Tj=25
Tj=25
Tj=125
Value(MAX)
1.7
10
1
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-mb)
thermal resistance from junction to mounting base
Value(MAX)
2.0
Unit
/W
http://www.kkg.com.cn
HAOHAI ELECTRONICS CO., LTD.
注册商标111 111仿冒必究
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
BT151B Series: TO-263 or D2PAK


Part Number BT151B-650R
Description Plastic envelope SCRs
Maker HAOHAI
Total Page 5 Pages
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