H4N60P - N-Channel MOSFET

Product Overview

HAOHAI

Part number	H4N60P
Manufacturer	HAOHAI
File Size	501.22 KB
Description	N-Channel MOSFET
Datasheet	H4N60P Datasheet
Additional preview pages of the H4N60P datasheet.

　Originative New Design 　Superior Avalanche Rugged Technology 　Robust Gate Oxide Technology 　Very Low Intrinsic Capacitances 　Excellent Switching Characteristics 　Unrivalled Gate Charge: 15nC(Typ. ) 　Extended Safe Operating Area 　Lower RDS(ON): 2.0Ω(Typ. ) @ VGS=10V 　100% Avalanche Tested 　Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω.
　、、、、、RoHS.
　、LCD、LED、、UPS、　、、、、、、　、、.
　TO-220P TO-220AB（）　TO-220F TO-220FP（） 4N60 Series Pin Assignment 3-Lead Plastic TO-220.

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Published: Mar 11, 2015 |