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BT134-600E Datasheet Preview

BT134-600E Datasheet

Sensitive Gate Triacs

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TM BT134-600E
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
bidirectional switching and phase control applications, where high sensitivity is required in all
four quadrants.
Symbol
T2 T1
Simplified outline
Pin
1
2
3
TAB
G
SOT-82
Description
Main terminal 1 (T1)
Main terminal 2 (T2)
gate (G)
Main terminal 2 (T2)
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 4 A
Value
600
4
25
Unit
V
A
A
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
Junction to mounting base
CONDITIONS
Full cycle
Half cycle
MIN
-
-
TYP
-
-
Rth j-a
Thermal resistance
Junction to ambient
In free air
- 100
MAX
3.0
3.7
UNIT
K/W
K/W
- K/W
http://www.haopin.com
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HAOPIN

BT134-600E Datasheet Preview

BT134-600E Datasheet

Sensitive Gate Triacs

No Preview Available !

TM BT134-600E
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
Repetitive peak off-state
Voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive surge
peak on-statecurrent
I2t I2t for fusing
dIT/dt
Repetitive rate of rise of
on-state current after
triggering
IGM
VGM
PGM
P G(AV )
Tstg
Tj
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature
CONDITIONS
Full sine wave;Tmb
full sine wave;,
Tj =25
prior to surge
T=10ms
I =TM 6A; IG=0.2A;
DIG/dt=0.2A/ s
107
t=20ms
t=16.7ms
T2+G+
T2+G-
T2-G-
T2-G+
Over any 20 ms period
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Value
600
4
25
27
3.1
UNIT
V
A
A
A
A2S
50 A/ s
50 A/ s
50 A/ s
10 A/ s
2A
5V
5W
0.5 W
150
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT1
Gate trigger current
VD=12V; IT=0.1A
IL
Latching current
VD=12V; I =GT 0.1A
IH Holding current VD=12V; I =GT 0.1A
VT On-state voltage IT=5A
VGT
Gate trigger voltage
VD=12V;IT=0.1A
VD=400V;IT=0.1A;TJ=125
ID Off-state leakage current VD=VDRM ;(max) TJ=125
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Dynamic Characteristics
dVD/dt
tgt
Critical rate of rise of
Off-state voltage
Gate controlled turn-on
time
V =DM 67% VDRM(ma ;x) Tj=125 ;
Exponential wave form;gate open circuit
I =TM 6A;VD=VDRM(m ;ax) IG=0.1A;
DlG/dt=5A/ s
MIN
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
TYP MAX UNIT
2.5 10 mA
4.0 10 mA
5.0 10 mA
11 25 mA
3.0 15 mA
10 20 mA
2.5 15 mA
4.0 20 mA
2.2 15 mA
1.4 1.70
V
0.7 1.5
0.4 -
V
V
0.1 0.5 mA
50 - V/ s
2-
s
http://www.haopin.com
2/5


Part Number BT134-600E
Description Sensitive Gate Triacs
Maker HAOPIN
PDF Download

BT134-600E Datasheet PDF





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