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HAOPIN

BTA216-600B Datasheet Preview

BTA216-600B Datasheet

Three quadrant triacs

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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTA216-600B
Three quadrant triacs
Description
Passivated high commutation triacs in a plastic envelope intended for use in circuits where
high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the
full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Symbol
T2 T1
Simplified outline
Pin
1
2
3
TAB
G 1 2 3 TO-220
Description
Main terminal 1 (T1)
Main terminal 2 (T2)
gate (G)
Main terminal 2 (T2)
SYMBOL PARAMETER
VDRM
Repetitive peak off-state voltages
IT RMS
RMS on-state current
ITSM Non-repetitive peak on-state current
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 16 A
Value
600
16
140
Unit
V
A
A
SYMBOL
PARAMETER
Rthj-mb
Thermal resistance
Junction to mounting base
Rth j-a
Thermal resistance
Junction to ambient
CONDITIONS MIN
full cycle
half cycle
-
-
in free air
-
TYP
-
-
60
MAX UNIT
1.2 K/W
1.7 K/W
- K/W
http://www.haopin.com
1/5




HAOPIN

BTA216-600B Datasheet Preview

BTA216-600B Datasheet

Three quadrant triacs

No Preview Available !

TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTA216-600B
Three quadrant triacs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDRM
IT(RMS)
Repetitive peak off-state
voltages
RMS on-state current
Full sine wave;Tmb 99oC
ITSM
Non repetitive surge
peak on-statecurrent
Full sine wave;Tj=25oC
prior to surge
I2t
dIT/dt
IGM
VGM
PGM
P G(AV)
Tstg
I2t for fusing
Repetitive rate of
rise of on-state current
after triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
range
Tp=10ms
I =TM 20A;IG=0.2A ;
dIG/dt=0.2A/ s
Over any 20 ms period
t=20ms
t=16.7ms
MIN
-
-
-
-
-
-
-
-
-
-
-40
Operating junction
Tj Temperature range
-40
Value
600
16
140
150
98
UNIT
V
A
A
A
A2S
100
2
5
5
0.5
150
A/ s
A
V
W
W
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT
Gate trigger current2
VD=12V; IT=0.1A
MIN TYP MAX UNIT
T2+G+
T2+G-
T2-G-
2
2
2
18 50
21 50
34 50
mA
mA
mA
IL
Latching current
VD=12V; I =GT 0.1A
T2+G+ - 31 60 mA
T2+G- - 34 90 mA
T2-G-
- 30 60 mA
IH
Holding current
VD=12V; I =GT 0.1A
VT
On-state voltage
IT=20A
VGT
Gate trigger voltage
VD=12V; IT=0.1A
VD=400V; IT=0.1A;TJ=125
ID Off-state leakage current V =V ;D DRM(max) TJ=125
- 31 60 mA
- 1.2 1.5 V
-
0.25
0.7
0.4
1.5
-
V
- 0.1 0.5 mA
Dynamic Characteristics
dVD/dt
dI /com dt
tgt
Critical rate of rise of
off-state voltage
VDM=67% VDR ;M(max) TJ=25
1000 4000 - V/ s
exponential waveform;gate open circuit
Critical rate of change of V =DM 400 V;TJ=25 IT(RM =S) 16A
commutating current
without snubber; gate open circuit
- 28 - A/ms
Gate controlled turn-on
time
I =TM 20 A V =V ;D DRM(max) IG=0.1A
dIG/dt=5 A/ s
- 2-
s
http://www.haopin.com
2/5


Part Number BTA216-600B
Description Three quadrant triacs
Maker HAOPIN
PDF Download

BTA216-600B Datasheet PDF






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