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HARRIS

HGT1S20N60C3R Datasheet Preview

HGT1S20N60C3R Datasheet

N-Channel IGBTs

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HGTG20N60C3R, HGTP20N60C3R,
S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS
January 1997
40A, 600V, Rugged UFS Series N-Channel IGBTs
Features
• 40A, 600V TJ = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs
• Low Conduction Loss
Description
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
Ordering Information
PART NUMBER
HGTP20N60C3R
HGTG20N60C3R
HGT1S20N60C3R
HGT1S20N60C3RS
PACKAGE
TO-220AB
TO-247
TO-262AA
TO-263AB
BRAND
20N60C3R
20N60C3R
20N60C3R
20N60C3R
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
The data was obtained with the diode at the same TJ as the
IGBT under test.
Formerly Developmental Type TA49047.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
G
E
Packaging
JEDEC STYLE TO-247
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
M A (FLANGE)
JEDEC TO-262AA
EC
G
G
E
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-3
File Number 4226.1




HARRIS

HGT1S20N60C3R Datasheet Preview

HGT1S20N60C3R Datasheet

N-Channel IGBTs

No Preview Available !

HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RGE = 10Ω.
ALL TYPES
600
40
20
80
±20
±30
80A at 600V
164
1.32
100
-40 to 150
260
10
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V
600 -
-
V
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
BVECS
ICES
VCE(SAT)
VGE(TH)
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
15 -
-
- - 250
- - 3.0
- 1.8 2.2
- 2.1 2.5
3.5 6.3 7.5
V
µA
mA
V
V
V
Gate-Emitter Leakage Current
Switching SOA (See Figure 12)
IGES
SSOA
VGE = ±20V
TJ = 150oC
RG = 10
VGE = 15V
VCE(PK) = 600V
L = 1mH
-
80
- ±100
--
nA
A
Gate-Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
- 9.0 -
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
dVCE/dt
dVCE/dt
EON
IC = IC110,
VCE = 0.5 BVES
VGE = 15V
VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 10
L = 1mH
Diode used in test circuit
RURP1560 at 150oC
- 87 110 nC
- 116 150
nC
- 34 -
ns
- 40 -
ns
- 390 500
ns
- 330 400
ns
- 1.3 -
V/ns
- 7.0 -
V/ns
- 2.3 -
mJ
Turn-Off Energy (Note 5)
Thermal Resistance
EOFF
RθJC
- 3.0 -
mJ
-
-
0.76
oC/W
NOTES:
3. dVCE/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading
edge of the input pulse and ending at the
RisUaRboPu1t5o6n0edhioadlfethaet TvJal=ue15a0to1C5.0AoCd.ifferent
point where the collector
diode or temperature will
voltage
result in
equals VCE(ON). This value
a different EON. For example
of EON was
with diode at
obtained with a
TJ = 25oC EON
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5-4


Part Number HGT1S20N60C3R
Description N-Channel IGBTs
Maker HARRIS
Total Page 6 Pages
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