C2312 Overview
Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
C2312 Key Features
- HG RF POWER TRANSISTOR
C2312 datasheet by HGSemi.
| Part number | C2312 |
|---|---|
| Datasheet | C2312-HGSemi.pdf |
| File Size | 275.71 KB |
| Manufacturer | HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
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Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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C2312 | 2SC2312 | Mitsubishi Electric |
| Part Number | Description |
|---|---|
| C2330 | 2SC2330 |
| C2395 | Silicon NPN POWER TRANSISTOR |