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HG Semiconductors
MRF475HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION:
The HG MRF475 is Designed for
13.6 V FM Large-Signal Amplifier Applications to 30 MHz.
MAXIMUM RATINGS
IC 4.0 A
VCE 18 V
VCB 48 V
PDISS
10 W @ TC = 25 °C
TSTG
-65 °C to +150 °C
TJ -65 °C to +150 °C
θJC 12.5 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = COLLECTOR
3 = EMITTER TAB = COLLECTOR
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 20 mA
BVCES
IC = 50 mA
BVEBO
IE = 5.0 mA
ICBO
VCB = 25 V
hFE
VCE = 5.0 V
IC = 500 mA
Cob VCB = 13.6 V
f = 1.0 MHz
GPE η
IMD
VCC = 13.6 V f1 = 30 MHz
ICQ = 20 mA
Pout = 12 W (PEP)
f2 = 30.001 MHz
MINIMUM TYPICAL MAXIMUM 18 48 4.0 1.
MRF475 Datasheet
