H01N45A Description
HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor.
H01N45A Key Features
- Typical RDS(on)=4.1Ω
- Extremely High dv/dt Capability
- 100% Avalanche Tested
- Gate Charge Minimized
- New High Voltage Benchmark
- Part: H01N45A
- Manufacturer: HI-SINCERITY
- Size: 44.18 KB
Related HI-SINCERITY Datasheets
| Part Number | Description |
|---|---|
| H01N60 | N-Channel Power Field Effect Transistor |