Datasheet4U Logo Datasheet4U.com

H07N60E - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H07N60E, a member of the H07N60E-HI PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSA733 is designed for use in driver stage of AF amplifier.

Features

  • High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage.

📥 Download Datasheet

Datasheet preview – H07N60E

Datasheet Details

Part number H07N60E
Manufacturer HI-SINCERITY
File Size 23.64 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H07N60E Datasheet
Additional preview pages of the H07N60E datasheet.

📁 Similar Datasheet

  • H0700KC14D - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
  • H0700KC14Y - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
  • H0700KC17D - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
  • H0700KC17Y - Fast Symmetrical Gate Turn-Off Thyristor (IXYS)
Other Datasheets by HI-SINCERITY
  • H07N60F - PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA733 is designed for use in driver stage of AF amplifier. Features • High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................
Published: |