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HI-SINCERITY

H07N60E Datasheet Preview

H07N60E Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200204
Issued Date : 1998.01.06
Revised Date : 2002.03.26
Page No. : 1/3
HSA733SP
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSA733 is designed for use in driver stage of AF amplifier.
Features
High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA)
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -60 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -100 mA
IB Base Current ............................................................................................................... -20 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
-60
-50
-5
-
-
-
-0.55
90
100
-
Typ.
-
-
-
-
-
-0.18
-0.62
200
180
4.5
Classification Of hFE1
Max.
-
-
-
-0.1
-0.1
-0.3
-0.7
600
-
6.0
Unit Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-60V, IC=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
VCE=-6V, IC=-1mA
IC=-1mA, VCE=-6V
IE=0, VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
HSA733SP
HSMC Product Specification




HI-SINCERITY

H07N60E Datasheet Preview

H07N60E Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HSP200204
Issued Date : 1998.01.06
Revised Date : 2002.03.26
Page No. : 2/3
Current Gain & Collector Current
1000
125oC
25oC
100 75oC
hFE @ VCE=6V
Saturation Voltage & Collector Current
1000
75oC
125oC
100
25oC
VCE(sat) @ IC=10IB
10
0.1
1 10 100
Collector Current-IC (mA)
1000
10
0.1
1 10 100
Collector Current-IC (mA)
1000
1000
ON Voltage & Collector Current
25oC
75oC
125oC
VBE(ON) @ VCE=6V
100
0.1
1 10 100
Collector Current-IC (mA)
1000
HSA733SP
HSMC Product Specification


Part Number H07N60E
Description PNP EPITAXIAL PLANAR TRANSISTOR
Maker HI-SINCERITY
Total Page 3 Pages
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