* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
* High Density Cell Design for Ultra Low On-Resistance
* High Power and Current Handing Capability
* Fully Characterized Avalanche Voltage and Current
* Ideal for Li ion Battery Pack Applications
H8205A
HI-SINCERITY
94.67 KB
Dual n-channel enhancement-mode mosfet.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No. : 1/4 H8205A Dual N-Channel Enhancement-M.
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