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HT666 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HT666 datasheet PDF (HT666-HI included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn epitaxial planar transistor.

Description

The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.

Features

  • High Frequency Current Gain.
  • High Speed Switching Transistor TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) BVCBO Collector to Base Voltage 75 V BVCEO Collector to Emitter Voltage 40 V BVEBO Emitter to Base Voltage 6 V IC Collector Current 600 mA Electrical Cha.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HT666-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HT666
Manufacturer HI-SINCERITY
File Size 43.81 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HT666 Datasheet

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    Full PDF Text Transcription

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    HI-SINCERITY MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications. Features • High Frequency Current Gain • High Speed Switching Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......................
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