900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






HITANO

1N4151W Datasheet Preview

1N4151W Datasheet

SURFACE MOUNT SWITCHING DIODE

No Preview Available !

HITANO ENTERPRISE CORP..
1N4148W THRU 1N4448W
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE
VOLTAGE RANGE -50 to 100 Volts
CURRENT - 0.15 to 0.2 Ampere
FEATURES
* Low power loss, high
efficiency
* Low leakage
* Low forward voltage drop
* High speed switching
* High current capability
* High reliability
SOD-123
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Solder plated, solderable per
MIL-STD-202E, Method 208 guaranteed
* Mounting position: Any
* Weight: 0.008 grams Approx.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by
20%.
.028(0.7)
.019(0.5)
.154(3.9)
.141(3.6)
.110(2.8)
.098(2.5)
.071(1.8)
.055(1.4)
(.000.28) MAX.
.005
(0.12)
MAX.
.053(1.4)
.037(1.0)
.016
(0.4)
MIN.
Dimensions in inches and (millimeters)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Power Dissipation Tamb=25oC
SYMBOL
VDC
VRRM
Io
IFSM
Ptot
Maximum Forward Voltage
VF
Maximum Reverse Current at Rated DC Blocking Voltage @ TA=25oC
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance(Note 2)
Operating and Storage Temperature Range
IR
trr
CJ
TJ,TSTG
Note: 1. Test conditions: IF=IR=10mA, RL=100Ω, measured at IR=1mA
2. Measured at 1MHz and VR=0
1N4148W
75
100
150
1N4150W
50
50
200
1N4151W
50
75
150
2.0 0.5
410
1.0 / 50mA 1.0 / 200mA 1.0 / 10mA
2.5 0.1 0.05
4.0 2.0
4.0 2.0
-55 to + 125
1N4448W
75
100
150
UNITS
V
V
mA
4.0
0.72 / 5mA
1.0 / 100mA
2.5
4.0
4.0
A
mW
V
µA
ns
pF
oC




HITANO

1N4151W Datasheet Preview

1N4151W Datasheet

SURFACE MOUNT SWITCHING DIODE

No Preview Available !

RATING AND CHARACTERISTIC CURVES (1N4148W THRU 1N4448W)
FIG.1 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1
0.1
0.01
0.2 0.4 0.6 0.8 1.0
INSTANTANEOUS FORWARD VOLTAGE, (V)
1.2
FIG.2 - TYPICAL REVERSE CHARACTERISTICS
10
TA= 150oC
TA= 125oC
1
TA= 85oC
0.1
TA= 55oC
0.01
0.001
0
TA= 25oC
10 20 30 40
REVERSE VOLTAGE, (V)
50
FIG.3 - TYPICAL JUNCTION CAPACITANCE
6.0
4.5
3.0
1.5 1N4 51W
0
02 46
REVERSE VOLTAGE, (V)
8
FIG.4 - RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
60
V RF=2V
2nF
5kVO


Part Number 1N4151W
Description SURFACE MOUNT SWITCHING DIODE
Maker HITANO
Total Page 2 Pages
PDF Download

1N4151W Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 1N4151 High-speed diodes
NXP
2 1N4151 Silicon Epitaxial Planar Diode
Vishay Telefunken
3 1N4151 SIGNAL DIODE
Rectron Semiconductor
4 1N4151 FAST SWITCHING DIODE
Diodes Incorporated
5 1N4151 SMALL SIGNAL DIODES
General Semiconductor
6 1N4151 500mW 75 Volt Silicon Epitaxial Diode
Micro Commercial Components
7 1N4151 High-speed diodes
NXP
8 1N4151 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES
Dc Components
9 1N4151 Silicon Planar Diodes
Diotec Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy