Datasheet Details
| Part number | D2095 |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 84.25 KB |
| Description | 2SD2095 |
| Datasheet | Datasheet (PDF) |
|
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Overview: Product Specification www.jmnic.com Silicon NPN Power Transistors.
| Part number | D2095 |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 84.25 KB |
| Description | 2SD2095 |
| Datasheet | Datasheet (PDF) |
|
|
|
¡¤ With TO-3P(H)IS package ¡¤ Built-in damper diode ¡¤ High voltage ,high speed ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ¡¤ ABSOLUTE MAXIMUM RATINGS AT Tc=25¡æ SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature www.DataSheet.co.kr CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 UNIT V V A A W ¡æ ¡æ i Datasheet pdf - http://www.DataSheet4U.net/ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=3.5A;
IB=0.8A IC=3.5A;
IB=0.8A VCB=500V;
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| Part Number | Description |
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