D2095 Description
Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=3.5A; VCB=10V;f=1MHz IF=5A ICP=3.5A ;IB1(end)=0.8A .DataSheet.co.kr...