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HY1707I Datasheet Preview

HY1707I Datasheet

N-Channel Enhancement Mode MOSFET

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HY1707P/M/B/I/MF/PS/PM
Features
70V/80A,
RDS(ON)= 6m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
DS
G
TO-262-3L
Applications
Power Management for Inverter Systems.
DS
G
TO-220MF-3L
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P MB I
HY1707 HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
MF PS PM
HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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151015




HOOYI

HY1707I Datasheet Preview

HY1707I Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

HY1707P/M/B/I/MF/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
70
±25
175
-55 to 175
80
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
320**
80
65
178
90
0.84
62.5
650***
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VSD * Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1707
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
70 74 - V
VDS=70V, VGS=0V
TJ=85°C
-
-
-1
µA
- 10
VDS=VGS, IDS=250µA
2 3 4V
VGS=±25V, VDS=0V
- - ±100 nA
VGS=10V, IDS=40A
- 6 7 m
ISD=40A, VGS=0V
- 0.8 1 V
- 55 - ns
IDS=40A, dlSD/dt=100A/µs
-
100
-
nC
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Part Number HY1707I
Description N-Channel Enhancement Mode MOSFET
Maker HOOYI
Total Page 16 Pages
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