Datasheet4U Logo Datasheet4U.com

HY1906B Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: HOOYI

📥 Download Datasheet

Datasheet Details

Part number HY1906B
Manufacturer HOOYI
File Size 2.20 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1906B Datasheet

General Description

DS G TO-220FB-3L DS G TO-263-2L Applications • Power Management for Inverter Systems.

D G N-Channel MOSFET Ordering and Marking Information S PB HY1906 HY1906 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish;

which are fully compliant with RoHS.

Overview

HY1906P/B N-Channel Enhancement Mode MOSFET.

Key Features

  • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ. ) @ V =10V GS.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
HUAYI Logo HY1906C2 Single N-Channel Enhancement Mode MOSFET HUAYI

More Datasheets from HOOYI

Part Number Description
HY1906P N-Channel Enhancement Mode MOSFET
HY1904C2 Single N-Channel Enhancement Mode MOSFET
HY1904D N-Channel Enhancement Mode MOSFET
HY1904U N-Channel Enhancement Mode MOSFET
HY1904V N-Channel Enhancement Mode MOSFET
HY1908B N-Channel Enhancement Mode MOSFET
HY1908D N-Channel Enhancement Mode MOSFET
HY1908M N-Channel Enhancement Mode MOSFET
HY1908MF N-Channel Enhancement Mode MOSFET
HY1908P N-Channel Enhancement Mode MOSFET