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HY1908B Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Download the HY1908B datasheet PDF. This datasheet also includes the HY1908P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HY1908P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1908B
Manufacturer HOOYI
File Size 3.99 MB
Description N-Channel Enhancement Mode MOSFET
Download HY1908B Download (PDF)

General Description

DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L Applications • Power Management for Inverter Systems.

DS G TO-3PS-3L DS G TO-3PS-3M D DS G TO-220MF-3L G N-Channel MOSFET Ordering and Marking Information S P HY1908 YYÿ XXXJWW G PS HY1908 YYÿ XXXJWW G M HY1908 YYÿ XXXJWW G PM HY1908 YYÿ XXXJWW G B HY1908 YYÿ XXXJWW G MF HY1908 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3S PS: TO-3PS-3L MF: TO-220MF-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish;

which are fully compliant with RoHS.

Overview

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET.

Key Features

  • 80V/90A, RDS(ON)= 7.0mΩ (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.