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HY1908D Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Datasheet Details

Part number HY1908D
Manufacturer HOOYI
File Size 629.70 KB
Description N-Channel Enhancement Mode MOSFET
Download HY1908D Download (PDF)

General Description

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications • Power Management for Inverter Systems.

D G N-Channel MOSFET Ordering and Marking Information S DUS HY1908 HY1908 HY1908 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish;

which are fully compliant with RoHS.

Overview

HY1908D/U/S N-Channel Enhancement Mode MOSFET.

Key Features

  • 80V/90A, RDS(ON)=7.8 mΩ (typ. ) @ V =10V GS.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.