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HY3306B - N-Channel Enhancement Mode MOSFET

Download the HY3306B datasheet PDF (HY3306P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode mosfet.

Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 60V/130A RDS(ON) = 5.4 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3306P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3306B
Manufacturer HOOYI
File Size 3.80 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3306B Datasheet

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Full PDF Text Transcription

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HY3306P/B N-Channel Enhancement Mode MOSFET Features • 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3306 HY3306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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