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HY3506W - N-Channel Enhancement Mode MOSFET

Download the HY3506W datasheet PDF. This datasheet also covers the HY3506P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications

Power Management for Inverter Systems.

Key Features

  • 60V/190A RDS(ON) = 3.0 mΩ (typ. ) @ VGS=10V Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3506P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3506W
Manufacturer HOOYI
File Size 1.42 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3506W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications • • Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device W : TO247-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.