Datasheet4U Logo Datasheet4U.com

HYG210P06LQ1D - P-Channel Enhancement Mode MOSFET

Description

TO-252-2L TO-251-3L TO-251-3S Applications

Power Management in DC/DC converter.

Load switching.

Motor control.

📥 Download Datasheet

Datasheet preview – HYG210P06LQ1D

Datasheet Details

Part number HYG210P06LQ1D
Manufacturer HOOYI
File Size 1.10 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG210P06LQ1D Datasheet
Additional preview pages of the HYG210P06LQ1D datasheet.

📁 Similar Datasheet

Other Datasheets by HOOYI

Full PDF Text Transcription

Click to expand full text
HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25mΩ(typ.)@VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching.  Motor control. P-Channel MOSFET Ordering and Marking Information D U V G210P06L G210P06L G210P06L XXXYWXXXXX XXXYWXXXXX XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS.
Published: |