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2SD965A Datasheet Preview

2SD965A Datasheet

GENERAL PURPOSE TRANSISTOR

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REPLACEMENT TYPE : 2SD965A
HED965A(NPN)
GENERAL PURPOSE TRANSISTOR
FEATURES
Low Collector-Emitter Saturation Voltage
Large Collector Power Dissipation and Current
Mini Power Type Package
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
7
Collector Current-Continuous
IC
5
Collector Power Dissipation
PC 750
Thermal Resistance From Junction to Ambient RθJA
167
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 ~150
Unit
V
V
V
A
mW
°C/W
°C
°C
SOT-89 MARKING: 965
1:BASE 2:COLLECTOR 3:EMITTER
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=10uA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA , IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10μA , IC=0
Collector Cut-off Current
ICBO VCB=10V , IE=0
Emitter Cut-off Current
IEBO VEB=7V , IC=0
hFE(1)
VCE=2V, IC=1mA
DC Current Gain
hFE(2)
VCE=2V, IC=500mA
hFE(3)
VCE=2V, IC=2A
Collector-Emitter Saturation Voltage
VCE(sat)
IC=3A , IB=0.1A
Output Capacitance
Cob VCB=20V,IE=0,f=1MHz
Transition Frequency
fT VCE=6V , IC=50mA ,f=200MHz
Min
40
20
7
Typ
200
230
150
150
Max
0.1
0.1
Unit
V
V
V
uA
uA
800
1V
50 pF
MHz
CLASSIFICATION OF hFE
Rank
Range
Q
230-380
R
340-600
S
560-800
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
1/4




HOTTECH

2SD965A Datasheet Preview

2SD965A Datasheet

GENERAL PURPOSE TRANSISTOR

No Preview Available !

Typical Characteristics
Static Characteristic
900
COMMON
800
1.8mA
EMITTER
1.6mA
Ta=25
700 1.4mA
600 1.2mA
500
400
300
200
100
0
0
2000
1mA
0.8mA
0.6mA
0.4mA
IB=0.2mA
2 4 6 8 10 12 14 16 18
COLLECTOR-EMITTER VOLTAGE VCE (V)
20
V ——
BEsat
I
C
1000
Ta=25
Ta=100
100
0.3
1
5000
1000
β=30
10 100 1000
COLLECTOR CURRENT IC (mA)
5000
V —— I
BE C
100
Ta=100 oC
10
Ta=25
1
0.1 VCE=2V
100 200 300 400 500 600 700 800 900 1000 1100 1200
BASE-EMMITER VOLTAGE VBE (mV)
f —— I
500 T C
100
10
2
10
VCE=6V
Ta=25 oC
100
COLLECTOR CURRENT IC (mA)
HED965A(NPN)
GENERAL PURPOSE TRANSISTOR
1000
h —— I
FE C
Ta=100 oC
Ta=25 oC
100
0.6 1
1
VCE=2V
10
100
1000
5000
COLLECTOR CURRENT IC (mA)
V ——
CEsat
I
C
0.1
Ta=100
Ta=25
0.01
0.3
1
500
100
β=30
10 100 1000
COLLECTOR CURRENT IC (mA)
5000
C / C ——
ob ib
V /V
CB EB
f=1MHz
IE=0/ IC=0
Ta=25 oC
C
ib
C
ob
10
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1 10 20
REVERSE VOLTAGE V (V)
P —— T
ca
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
150
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
2/4


Part Number 2SD965A
Description GENERAL PURPOSE TRANSISTOR
Maker HOTTECH
Total Page 4 Pages
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