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MGA-81563 Datasheet Preview

MGA-81563 Datasheet

Amplifier

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0.1 – 6 GHz 3 V, 14 dBm Amplifier
Technical Data
MGA-81563
Features
• +14.8 dBm P1dB at 2.0 GHz
+17 dBm Psat at 2.0 GHz
• Single +3V Supply
• 2.8 dB Noise Figure at
2.0␣ GHz
• 12.4 dB Gain at 2.0 GHz
• Ultra-miniature Package
• Unconditionally Stable
Applications
• Buffer or Driver Amp for
PCS, PHS, ISM, SATCOM
and WLL Applications
• High Dynamic Range LNA
Simplified Schematic
INPUT
3
OUTPUT
and Vd
6
BBIIAASS
GND
1, 2, 4, 5
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
GND 1
GND 2
INPUT 3
6
OUTPUT
and Vd
5 GND
4 GND
Note: Package marking provides
orientation and identification.
Description
Hewlett-Packard’s MGA-81563 is
an economical, easy-to-use GaAs
MMIC amplifier that offers
excellent power and low noise
figure for applications from 0.1 to
6 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of a
SOT-143 package.
The output of the amplifier is
matched to 50 (better than
2.1:1␣ VSWR) across the entire
bandwidth. The input is partially
matched to 50 (better than
2.5:1␣ VSWR) below 4 GHz and
fully matched to 50 (better than
2:1 VSWR) above. A simple series
inductor can be added to the input
to improve the input match below
4 GHz. The amplifier allows a
wide dynamic range by offering a
2.7 dB NF coupled with a +27 dBm
Output IP3.
The circuit uses state-of-the-art
PHEMT technology with proven
reliability. On-chip bias circuitry
allows operation from a single
+3␣ V power supply, while resistive
feedback ensures stability (K>1)
over all frequencies and
temperatures.
5965-9684E
6-196




HP

MGA-81563 Datasheet Preview

MGA-81563 Datasheet

Amplifier

No Preview Available !

MGA-81563 Absolute Maximum Ratings
Symbol
Vd
Vgd
Vin
Pin
Tch
TSTG
Parameter
Device Voltage, RF Output
to Ground
Device Voltage, Gate
to Drain
Range of RF Input Voltage
to Ground
CW RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
dBm
°C
°C
Absolute
Maximum[1]
6.0
-6.0
+0.5 to -1.0
+13
165
-65 to 150
Thermal Resistance[2]:
θch-c = 220°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TC = 25°C (TC is defined to be the
temperature at the package pins
where contact is made to the
circuit board.)
MGA-81563 Electrical Specifications, TC = 25°C, ZO = 50 , Vd = 3 V
Symbol Parameters and Test Conditions
Units Min.
Gtest Gain in test circuit[1]
f = 2.0 GHz
10.5
NFtest Noise Figure in test circuit[1]
f = 2.0 GHz
NF50 Noise Figure in 50 system
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
|S21|2 Gain in 50 system
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
Typ. Max. Std Dev [2]
12.4 0.44
2.8 3.8
0.21
3.1
3.0
2.7 0.21
2.7
2.8
3.5
12.5
12.5
12.3 0.44
11.8
11.4
10.2
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dBm
15.1
14.8
14.8
14.8
14.8
14.7
0.86
IP3 Output Third Order Intercept Point
VSWRin Input VSWR
f = 2.0 GHz dBm
f = 2.0 GHz
+27
2.7:1
1.0
VSWRout Output VSWR
f = 2.0 GHz
2.0:1
Id Device Current
mA 31 42 51
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
6-197


Part Number MGA-81563
Description Amplifier
Maker HP
Total Page 12 Pages
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