HS70N06PA
Description
The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching
2. Features
- RDS(ON)=15mΩ@VGS=10V.
- Ultra low gate charge (typical 90n C)
- Low reverse transfer capacitance
- Fast switching capability
- 100％ avalanche energy specified
- Improved dv/dt capability
3. Pin configuration
TO-220
Pin 1 2 3
1 of 6
Function Gate Drain Source
0 Amps, 60 Volts N-CHANNEL MOSFET
4. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Drain to source voltage
VDSS
Gate to source voltage Continuous drain current Drain current pulsed (note1)
TJ=25 ºC TJ=100 ºC
VGSS ID ID IDM
±20 70
56 280
Single pulsed avalanche energy (note2)
EAS 600 m J
Repetitive avalanche energy...
