CS8N65FA9H Datasheet | HUAJING MICROELECTRONICS

Description ： CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28n C) l Low Reverse transfer capacitances(Typical:14p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C TJ，Tstg TL Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS PD(TC=25℃) RDS(ON)Typ Rating 650 8 5.5 32 ±30 500 40 2.8 5.0 45 0.36 150，- 55 to 150 300 V A W Ω Units V A A A V m J m J A V/ns W W/℃ ℃ ℃ W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2015V01 CS8N65F A9H ○R Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol...