900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






HUAJING MICROELECTRONICS

CS8N65FA9H Datasheet Preview

CS8N65FA9H Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

Huajing Discrete Devices
Silicon N-Channel Power MOSFET
R
CS8N65F A9H
General Description
CS8N65F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
8
45
0.9
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.3)
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:14pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
Drain-to-Source Voltage
650
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
8
5.5
32
±30
500
40
2.8
5.0
PD
TJTstg
TL
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
45
0.36
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012




HUAJING MICROELECTRONICS

CS8N65FA9H Datasheet Preview

CS8N65FA9H Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

Huajing Discrete Devices
R CS8N65F A9H
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
VGS=10V,ID=4.0A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =4A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =8.0A VDD = 325V
VGS = 10V RG = 9.1
ID =8.0A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.5 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.9 1.3
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 7 --
-- 1240 --
-- 108 --
-- 14 --
Units
S
pF
Rating
Min. Typ. Max.
-- 13 --
-- 15 --
-- 40 --
-- 21 --
-- 28
-- 6 --
-- 11 --
Units
ns
nC
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2012


Part Number CS8N65FA9H
Description Silicon N-Channel Power MOSFET
Maker HUAJING MICROELECTRONICS
PDF Download

CS8N65FA9H Datasheet PDF





Similar Datasheet

1 CS8N65FA9H Silicon N-Channel Power MOSFET
HUAJING MICROELECTRONICS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy