HPA600R1K0DN - Silicon N-Channel Power MOSFET

Product Overview

HUAJING MICROELECTRONICS

Datasheet Details

Part number	HPA600R1K0DN
Manufacturer	HUAJING MICROELECTRONICS
File Size	390.64 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HPA600R1K0DN Datasheet
Additional preview pages of the HPA600R1K0DN datasheet.

Product details

Description

HPA600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Superior switching performance l Low on resistance(Rdson≤1Ω) l Low gate charge (Typical Data:20.2nC) l Low reverse transfer capacitances(Typical:17.8pF) l 100% Single pulse avalanche energy test.

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Published: Mar 22, 2018 |