HPA600R550DN mosfet equivalent, silicon n-channel power mosfet.
l Superior switching performance l Low on resistance(Rdson≤0.55Ω) l Low gate charge (Typical Data:27.3nC) l Low reverse transfer capacitances(Typical:32.1pF) l 100% Sing.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
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