Datasheet Details
| Part number | HPL650R1K9DN |
|---|---|
| Manufacturer | HUAJING MICROELECTRONICS |
| File Size | 398.91 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HPL650R1K9DN-HUAJINGMICROELECTRONICS.pdf |
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Overview: Silicon N-Channel Power MOSFET HPL650R1K9DN ○R General.
| Part number | HPL650R1K9DN |
|---|---|
| Manufacturer | HUAJING MICROELECTRONICS |
| File Size | 398.91 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HPL650R1K9DN-HUAJINGMICROELECTRONICS.pdf |
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： HPL650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-262, which accords with the RoHS standard.
| Part Number | Description |
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